Vapor deposition apparatus and method of manufacturing organic light-emitting display apparatus

ABSTRACT

A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims the benefit of Korean Patent Application No.10-2012-0149758, filed on Dec. 20, 2012, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND

1. Field

Example embodiments relate to a vapor deposition apparatus and a methodof manufacturing an organic light-emitting display apparatus. Moreparticularly, example embodiments relate to a vapor deposition apparatuscapable of efficiently processing a deposition process and easilyimproving a characteristic of a deposition layer, and to a method ofmanufacturing an organic light-emitting display apparatus using thesame.

2. Description of the Related Art

Each of a semiconductor device, a display apparatus, and otherelectronic devices includes a plurality of thin films. In order to formthe plurality of thin films, various methods may be used, e.g., a vapordeposition method.

For example, the vapor deposition method uses at least one gas as asource gas to form a thin film. The vapor deposition method may includevarious methods, e.g., a chemical vapor deposition (CVD), an atomiclayer deposition (ALD), etc. For example, the ALD involves injecting asource gas, purging and pumping the source gas, adsorbing asingle-layered atomic layer or a multi-layered atomic layer on asubstrate, and then injecting another source gas, followed by purgingand pumping the other source gas to form a desired single-layered ormulti-layered atomic layer.

Among display apparatuses, an organic light-emitting display apparatusis advantageous with its wide viewing angle, excellent contrast ratio,and a high response time. Thus, the organic light-emitting displayapparatus is regarded as a next-generation display apparatus. Theorganic light-emitting display apparatus includes an intermediate layerhaving an organic emission layer (EML) between a first electrode and asecond electrode that face each other, and also includes at least onethin film. For example, in order to form the thin film of the organiclight-emitting display apparatus, a deposition process may be used.

SUMMARY

Example embodiments provide a vapor deposition apparatus capable ofefficiently processing a deposition process and easily improving acharacteristic of a deposition layer, and a method of manufacturing anorganic light-emitting display apparatus.

According to an aspect of the example embodiments, there is provided avapor deposition apparatus for forming a deposition layer on asubstrate, the vapor deposition apparatus including a supply unitconfigured to receive a first source gas, a reaction space connected tothe supply unit, a plasma generator in the reaction space, a firstinjection unit configured to inject a deposition source material to thesubstrate, the deposition source material including the first sourcegas, and a filament unit in the reaction space, the filament unit beingconnected to a power source.

The vapor deposition apparatus may further include a support pillar inthe reaction space, the filament unit being wound around the supportpillar.

The filament unit may include a metal material or a ceramic material.

The filament unit may include at least one of tungsten, tantalum,titanium, LaB₆, BaO, and SrO.

The plasma generator may have a hollow column shape, the filament unitbeing inside the hollow column shape of the plasma generator.

The plasma generator may have a plurality of first holes facing thesupply unit and a plurality of second holes facing the first injectionunit.

The vapor deposition apparatus may further include an intermediate partwith a hollow column shape, the intermediate part being between andconcentric with the plasma generator and the filament unit.

The intermediate part may have a plurality of first holes facing thesupply unit and a plurality of second holes facing the first injectionunit.

A space may be defined between the plasma generator and a correspondingsurface of the reaction space, the corresponding surface of the reactionspace being an inner circumferential surface of the reaction spaceoverlapping the plasma generator, and plasma is configured to begenerated in the defined space.

The plasma generator may have an electrode form.

The vapor deposition apparatus may further include a connection unitbetween the reaction space and the first injection unit, the connectionunit having a width less than each of the reaction space and the firstinjection unit.

The substrate may be closer to a ground than the vapor depositionapparatus, the first injection unit facing the ground.

The substrate may be farther from a ground than the vapor depositionapparatus, the first injection unit being in an opposite direction withrespect to the ground.

The substrate and the vapor deposition apparatus may be configured tomove relatively to each other.

The vapor deposition apparatus may further include a second injectionunit adjacent to the first injection unit, the second injection unitbeing separated from the first injection unit.

The second injection unit may be configured to inject a purge gas or asecond source material toward the substrate.

The vapor deposition apparatus may further include a second injectionunit and a third injection unit adjacent to the first injection unit,each of the second and third injection units being separated from thefirst injection unit, and the first injection unit being between thesecond and third injection units.

Each of the second injection unit and the third injection unit may beconfigured to inject toward the substrate one of a purge gas, a secondsource material, and a third source material.

The vapor deposition apparatus may further include a plurality ofexhaustion units adjacent to the first injection unit, the secondinjection unit, and the third injection unit, respectively.

The plurality of exhaustion units may include a first exhaustion unitbetween the first injection unit and the second injection unit, and asecond exhaustion unit between the first injection unit and the thirdinjection unit.

According to another aspect of the example embodiments, there isprovided a vapor deposition apparatus for forming a deposition layer ona substrate, the vapor deposition apparatus including a plurality offirst regions, each of the plurality of first regions including a supplyunit configured to receive a first source gas, a reaction spaceconnected to the supply unit, a plasma generator in the reaction space,a first injection unit configured to inject a deposition source materialto the substrate, the deposition source material including the firstsource gas, and a filament unit in the reaction space, the filament unitbeing connected to a power source, a plurality of second regions, eachof the plurality of second regions being configured to inject a secondsource material being toward the substrate, and a plurality of purgeparts, the plurality of purge parts being configured to inject a purgegas toward the substrate.

Each of the plurality of purge parts may be between the first region andthe second region.

The vapor deposition apparatus may further include a plurality ofexhaustion units adjacent to the first region, the second region, andthe purge part.

According to another aspect of the example embodiments, there isprovided a deposition method for forming a deposition layer on asubstrate, the method including supplying a first source gas from asupply unit to a reaction space, generating plasma by using a plasmagenerator disposed in the reaction space, activating the first sourcegas in the reaction space by using a filament unit in the reaction spaceand connected to a power source, such that at least a portion of thefirst source gas in the reaction space is changed into a radical status,and injecting a first source deposition material to the substrate, thefirst source deposition material including the first source gas in theradical status.

Using the filament unit may include emitting heat and thermal electronsto activate the first source gas.

A deposition process may be performed while the substrate and the vapordeposition apparatus move relatively to each other.

According to another aspect of the example embodiments, there isprovided a method of manufacturing an organic light-emitting displayapparatus, the method including disposing a substrate to correspond to avapor deposition apparatus, and forming a thin film on the substrate,the thin film being at least one of a first electrode, an intermediatelayer having an organic emission layer, a second electrode, and anencapsulation layer, and forming the thin film include supplying a firstsource gas from a supply unit to a reaction space, generating plasma byusing a plasma generator disposed in the reaction space, activating thefirst source gas in the reaction space by using a filament unit that inthe reaction space and connected to a power source, such that at least aportion of the first source gas in the reaction space is changed into aradical status, and injecting a first source deposition material to thesubstrate, the first source deposition material including the firstsource gas in the radical status.

Forming the thin film may include forming the encapsulation layer on thesecond electrode.

Forming the thin film may include forming an insulating layer.

Forming the thin film may include forming a conductive layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the example embodimentswill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings, in which:

FIG. 1 is a perspective view of a vapor deposition apparatus accordingto an embodiment;

FIG. 2 is an exploded perspective view of the vapor deposition apparatusof FIG. 1;

FIG. 3 is a front view of the vapor deposition apparatus of FIG. 1;

FIG. 4 is a plane view of a vapor deposition apparatus according toanother embodiment;

FIG. 5 is a plane view of a vapor deposition apparatus according toanother embodiment;

FIG. 6 is a plane view of a vapor deposition apparatus according toanother embodiment;

FIG. 7 is a plane view of a vapor deposition apparatus according toanother embodiment;

FIG. 8 is a cross-sectional view of an organic light-emitting displayapparatus manufactured by using a vapor deposition apparatus accordingto an embodiment; and

FIG. 9 is a magnified view of an F portion shown in FIG. 8.

DETAILED DESCRIPTION

Hereinafter, example embodiments will be described in detail withreference to FIGS. 1-3. FIG. 1 is a perspective view of a vapordeposition apparatus 100 according to an embodiment, FIG. 2 is anexploded perspective view of the vapor deposition apparatus 100, andFIG. 3 is a front view of the vapor deposition apparatus 100.

Referring to FIGS. 1 through 3, the vapor deposition apparatus 100includes a housing 101, a supply unit 105, a reaction space 103, aplasma generator 111, an injection unit 142, and a filament unit 130.

The housing 101 is formed of a material having durability so as tomaintain an entire shape and appearance of the vapor depositionapparatus 100. Although FIG. 1 illustrates the housing 101 that issimilar to a rectangular parallelepiped, a shape of the housing 101 isnot limited thereto.

The supply unit 105 is arranged at an upper portion of the housing 101,and is a through-hole so as to supply one or more source gases. Thenumber of the supply units 105 may vary according to a size of adeposition target to which a deposition process is performed.

The reaction space 103 is connected with the supply unit 105 and isdefined as a space in, e.g., within, the housing 101. For example, thereaction space 103 may have a cylindrical shape, e.g., the reactionspace 103 may be a hollow channel inside the housing 101, and may be influid communication with the supply unit 105.

The injection unit 142 is connected to the reaction space 103. That is,the reaction space 103 is arranged between the supply unit 105 and theinjection unit 142. In detail, the source gas is input via the supplyunit 105 into the reaction space 103, where the source gas is changedinto a desired status, e.g., into a reaction product. Then, the reactionproduct from the reaction space 103 is delivered to the injection unit142 to react with the deposition target in the injection unit 142, i.e.,the deposition process is performed on a surface of the depositiontarget. For example, the injection unit 142 may be connected to thereaction space 103 via a connection unit 141, e.g., the connection unit141 may have a width that is less than a width of each of the injectionunit 142 and the reaction space 103. For example, the source gas may bechanged to a radical status, so a deposition source material in theradical status may be effectively delivered to the injection unit 142.

The plasma generator 111 is disposed in the reaction space 103. Indetail, the plasma generator 111 may have an electrode form having avoltage applied thereto. Also, the plasma generator 111 may have ahollow column shape. In particular, the plasma generator 111 may have ahollow cylindrical-column shape having a curved outer surface.

A surface 115 defining an inner circumferential surface of the reactionspace 103 corresponds to the plasma generator 111, e.g., the surface 115may overlap the plasma generator 111. For example, the surface 115 maybe that of a ground electrode. Therefore, plasma may be generated in aspace between the plasma generator 111 and the corresponding surface115. The source gas that is input via the supply unit 105 into thereaction space 103 is changed to a radical status in the space betweenthe plasma generator 111 and the corresponding surface 115, so that adeposition characteristic of the source gas is improved.

The plasma generator 111 includes at least one first hole 111 a and atleast one second hole 111 b. In more detail, the plasma generator 111includes a plurality of the first holes 111 a and a plurality of thesecond holes 111 b. The first holes 111 a are formed in a top surface ofthe plasma generator 111 in a direction close to the supply unit 105,and the second holes 111 b are formed in a bottom surface of the plasmagenerator 111 in a direction close to the injection unit 142.

The filament unit 130 is disposed in the reaction space 103. In moredetail, the filament unit 130 is disposed in the plasma generator 111.That is, the filament unit 130 is disposed inside the hollowcylindrical-column shape of the plasma generator 111. Although notillustrated, a power (not shown) is connected to the filament unit 130so as to apply voltage thereto, thereby causing thermionic emission,i.e., emission of heat and thermal electrons, from the filament unit130. Also, the heat and thermal electrons collide with gas around thefilament unit 130, thereby generating secondary electrons.

The filament unit 130 may be formed of various materials including ametal material or a ceramic material which has a high electron emissioncoefficient. Examples of metal materials may include tungsten, tantalum,or titanium, and examples of ceramic materials may include LaB₆, BaO orSrO.

The filament unit 130 is supported by a support pillar 120. For example,as illustrated in FIG. 3, the filament unit 130 and the support pillar120 may be separated, e.g., spaced apart, from each other. In anotherexample, as illustrated in FIG. 2, the filament unit 130 and the supportpillar 120 may directly contact each other at predetermined regions. Bydoing so, the filament unit 130 may be stably disposed on the supportpillar 120, e.g., the filament unit 130 may be wound around the supportpillar 120 multiple times.

An intermediate part 112 is disposed between the plasma generator 111and the filament unit 130. That is, similarly to the plasma generator111, the intermediate part 112 has a hollow cylindrical-column shape.Also, the intermediate part 112 has at least one first hole 112 a and atleast one second hole 112 b. In more detail, the intermediate part 112has a plurality of the first holes 112 a and a plurality of the secondholes 112 b, e.g., the first holes 112 a may be formed in a top surfaceof the intermediate part 112 in a direction close to the supply unit 105and the second holes 112 b may be formed in a bottom surface of theintermediate part 112 in a direction close to the injection unit 142.Also, the first holes 112 a of the intermediate part 112 may correspondto the first holes 111 a of the plasma generator 111, and the secondholes 112 b of the intermediate part 112 may correspond to the secondholes 111 b of the plasma generator 111.

With reference to FIG. 3, a deposition method using the vapor depositionapparatus 100 is briefly described below.

When a substrate S, i.e., a deposition target, is disposed to correspondto the injection unit 142 of the vapor deposition apparatus 100, adeposition process is performed on the substrate S. Here, the depositionprocess may be performed while the substrate S and the vapor depositionapparatus 100 relatively move with respect to each other. For example,as illustrated in FIG. 3, the deposition process may be performed whilethe substrate S is moved in an X-axis direction of FIG. 3. In anotherexample, the vapor deposition apparatus 100 may move. However, inanother embodiment, the deposition process may be performed while thesubstrate S is fixed with respect to the vapor deposition apparatus 100.

First, at least one source gas is input to the reaction space 103 viathe supply unit 105. Here, plasma is generated between the plasmagenerator 111 and the corresponding surface 115 of the reaction space103, and at least some portion of the source gas that is input to thereaction space 103 is changed to a radical status.

Here, a voltage is applied to the filament unit 130 via a power (notshown) so that heat is generated in the filament unit 130. Also, thefilament unit 130 is formed of a material having a high electronemission coefficient, thereby emitting thermal electrons. The generatedheat and thermal electrons facilitate a process in which the source gasthat is input to the reaction space 103 is changed to the radicalstatus. That is, an amount of source gas changed into the radical statusis increased, and a speed of the change is accelerated. In particular,as the filament unit 130 has a surface temperature of at least 1500° C.when power is applied thereto, heat radiating from the filament unit 130increases the efficiency of change from the source gas to the radicalstatus.

Also, as the heat and thermal electrons emitted from the filament unit130 collide with gas in an adjacent region, i.e., the source gas and aninert gas for plasma generation, the heat and thermal electrons generatesecondary electrons. In this regard, the secondary electrons alsoincrease the efficiency of the change from the source gas to the radicalstatus.

In order to allow the source gas to effectively react with the heat andthermal electrons emitted from the filament unit 130, the first holes111 a and the second holes 111 b are formed in the plasma generator 111.That is, the source gas easily reaches the filament unit 130 via thefirst holes 111 a and the second holes 111 b of the plasma generator111.

The intermediate part 112 that is disposed between the plasma generator111 and the filament unit 130 allows source gases to be uniformlysupplied. In particular, the first holes 112 a and the second holes 112b of the intermediate part 112 facilitate movement of the source gasesso as to allow the source gases to uniformly correspond to the filamentunit 130 without local gathering. Also, a source in the radical statusis easily exhausted via the first holes 112 a and the second holes 112 bof the intermediate part 112, and then is uniformly delivered to theinjection unit 142.

The source in the radical status reaches a surface of the substrate S,so that a desired deposition layer is formed.

According to the present embodiment, when the vapor deposition apparatus100 changes the source gas to the radical status by using the plasmagenerator 111, the vapor deposition apparatus 100 uses the filament unit130 so that the source gas is easily activated. By doing so, theefficiency of the change from the source gas to the radical status isincreased, so that a characteristic of the deposition layer is easilyimproved.

FIG. 4 is a plane view of a vapor deposition apparatus 100′ according toanother embodiment. For convenience of description, the presentembodiment is described with reference to differences relative to theprevious embodiment.

Referring to FIG. 4, the vapor deposition apparatus 100′ includes thehousing 101, the supply unit 105, the reaction space 103, the plasmagenerator 111, the injection unit 142, and the filament unit 130.

In the previous embodiment, the deposition process is performed whilethe substrate S is disposed below the vapor deposition apparatus 100.That is, the vapor deposition apparatus 100 is disposed farther from aground than the substrate S. Thus, the injection unit 142 of the vapordeposition apparatus 100 injects the source in the radical status towarda ground direction.

However, one or more embodiments of the example embodiments are notlimited thereto. That is, as illustrated in FIG. 4, a deposition processmay be performed while a substrate S is disposed above the vapordeposition apparatus 100′. That is, the vapor deposition apparatus 100′is disposed closer to a ground than the substrate S. Thus, the injectionunit 142 of the vapor deposition apparatus 100′ injects the source inthe radical status in an opposite direction with respect to the ground.

FIG. 5 is a plane view of a vapor deposition apparatus 200 according toanother embodiment. Referring to FIG. 5, the vapor deposition apparatus200 includes a housing 201, a supply unit (not shown), a reaction space203, a plasma generator 211, a first injection unit 242, a filament unit230, and a second injection unit 250.

The housing 201 is formed of a material having durability so as tomaintain an entire shape and appearance of the vapor depositionapparatus 200.

The supply unit is disposed in the housing 201, e.g., the supply unitmay be disposed in an upper portion of the housing 201 and may include aplurality of through-holes so as to supply a first source gas to thereaction space 203 and to supply a second source gas to the secondinjection unit 250. The reaction space 203 may be connected with thesupply unit and is defined as a predetermined space in the housing 201,e.g., the reaction space 203 may have a cylindrical shape.

The first injection unit 242 is connected to the reaction space 203.That is, the reaction space 203 is arranged between the supply unit andthe first injection unit 242. The first source gas input via the supplyunit is changed to a desired status in the reaction space 203, isdelivered to the first injection unit 242, and reacts with a depositiontarget in the first injection unit 242, so that a deposition process isperformed on a surface of the deposition target. The first injectionunit 242 may be connected to the reaction space 203 via a connectionunit 241, e.g., the connection unit 241 may have a width that is lessthan a width of each of the first injection unit 242 and the reactionspace 203.

The plasma generator 211 is disposed in the reaction space 203. In moredetail, the plasma generator 211 may have an electrode form having avoltage applied thereto. Also, the plasma generator 211 may have ahollow column shape. In particular, the plasma generator 211 may have ahollow cylindrical-column shape having a curved outer surface.

Also, a corresponding surface 215 that is defined as an innercircumferential surface of the reaction space 203 is a member thatcorresponds to the plasma generator 211, e.g., the corresponding surface215 may be a ground electrode. By doing so, plasma may be generated in aspace between the plasma generator 211 and the corresponding surface215. The source gas that is input via the supply unit is changed to aradical status in the space between the plasma generator 211 and thecorresponding surface 215, so that a deposition characteristic of thesource gas is improved.

The plasma generator 211 includes a first hole (not shown) and a secondhole (not shown) and is the same as that in the embodiment of FIGS. 1-3.Thus, detailed descriptions are omitted here.

The filament unit 230 is disposed in the reaction space 203. In moredetail, the filament unit 230 is disposed in the plasma generator 211.That is, the filament unit 230 is disposed in a space of the plasmagenerator 211 having the hollow cylindrical-column shape. Although notillustrated, a power (not shown) is connected to the filament unit 230so as to apply a voltage thereto. By doing so, heat and thermal electronemission are emitted from the filament unit 230. Also, the heat andthermal electron emission collide with a gas around the filament unit230, thereby generating secondary electrons.

The filament unit 230 may be formed of various materials exhibiting highelectron emission coefficient, e.g., a metal material or a ceramicmaterial. Examples of metal materials include tungsten, tantalum, ortitanium, and examples of ceramic materials include LaB₆, BaO or SrO.

The filament unit 230 is supported by a support pillar 220. The filamentunit 230 is the same as that in the embodiment of FIGS. 1-3. Thus,detailed descriptions are omitted here.

An intermediate part 212 is disposed between the plasma generator 211and the filament unit 230. That is, similarly to the plasma generator211, the intermediate part 212 has a hollow cylindrical-column shape.Also, the intermediate part 212 has a first hole (not shown) and asecond hole (not shown) and is the same as that in the previousembodiment, thus, detailed descriptions are omitted here.

The second injection unit 250 is formed adjacent to the first injectionunit 242. Also, the second injection unit 250 may be separated from thefirst injection unit 242. The second injection unit 250 injects a secondsource material to be deposited on the substrate S toward the substrateS. Although not illustrated, the second injection unit 250 is connectedwith a supply unit so as to receive the second source material, e.g.,the supply unit for the second injection unit 250 may be formedseparately from the supply unit (not shown) that supplies the firstsource material to the reaction space 203.

A deposition method using the vapor deposition apparatus 200 is brieflydescribed below.

When the substrate S, i.e., the deposition target, is disposed tocorrespond to the second injection unit 250 of the vapor depositionapparatus 200, the second injection unit 250 injects the second sourcematerial, i.e., the second source material in a gas status, toward thesubstrate S.

Afterward, when the substrate S is moved in the X-axis direction of FIG.5, i.e., along an arrow direction, to correspond to the first injectionunit 242 of the vapor deposition apparatus 200, the first source gas isinput to the reaction space 203. Here, plasma is generated between theplasma generator 211 and the corresponding surface 215 of the reactionspace 203, and at least some portion of the first source gas that isinput to the reaction space 203 is changed to a radical status.

Here, a voltage is applied to the filament unit 230 via a power (notshown) so that heat is generated in the filament unit 230. Also, thefilament unit 230 is formed of a material having a high electronemission coefficient, thereby emitting a thermal electron emission. Theheat and thermal electron emission facilitate a process in which thefirst source gas that is input to the reaction space 203 is changed tothe radical status. That is, an amount of the change from the firstsource gas to the radical status is increased, and a speed of the changeis accelerated. In particular, radiant heat from the filament unit 230,having a surface temperature of at least 1500° C., increases anefficiency of the change from the first source gas to the radicalstatus.

Also, the heat and thermal electrons emitted from the filament unit 230collide with a gas in an adjacent region, i.e., the source gas and aninert gas for plasma generation, so that the heat and thermal electrongenerate a secondary electron emission. In this regard, the secondaryelectron emission also increases the efficiency of the change from thefirst source gas to the radical status.

The intermediate part 212 that is disposed between the plasma generator211 and the filament unit 230 allows source gases to be uniformlysupplied. A source in the radical status reaches a surface of thesubstrate S, so that a desired deposition layer is formed. Accordingly,the deposition layer including the first source material and the secondsource material is formed on the substrate S. For example, asingle-layered deposition layer including the first source material andthe second source material may be formed on the substrate S.

However, example embodiments are not limited thereto. That is, thesecond injection unit 250 may not inject the second source material fordeposition but may inject a purge gas that does not involve thedeposition.

According to the present embodiment, when the vapor deposition apparatus200 changes the source gas to the radical status by using the plasmagenerator 211, the vapor deposition apparatus 200 uses the filament unit230 so that the source gas is easily activated. By doing so, theefficiency of the change from the source gas to the radical status isincreased, so that a characteristic of the deposition layer is easilyimproved.

Here, the deposition process may be performed while the substrate S andthe vapor deposition apparatus 200 move relatively to each other. Forexample, as illustrated in FIG. 5, the deposition process may beperformed while the substrate S is moved in an X-axis direction of FIG.5, e.g., while the vapor deposition apparatus 200 is stationary, or viceversa. In another example, the deposition process may be performed whilethe substrate S is fixed with respect to the vapor deposition apparatus200. Also, as in the previous embodiment of FIG. 4, positions of thesubstrate S and the vapor deposition apparatus 200 may be switched.

FIG. 6 is a plane view of a vapor deposition apparatus 300 according toanother embodiment. Referring to FIG. 6, the vapor deposition apparatus300 includes a housing 301, a supply unit (not shown), a reaction space303, a plasma generator 311, a first injection unit 342, a filament unit330, a second injection unit 350-1, and a third injection unit 350-2.Also, the vapor deposition apparatus 300 includes a plurality ofexhaustion units, e.g., exhaustion units 370-1, 370-2, 370-3, and 370-4.

The housing 301 is formed of a material having durability so as tomaintain an entire shape and appearance of the vapor depositionapparatus 300.

The supply unit is disposed in the housing 301, e.g., the supply unitmay be disposed in an upper portion of the housing 301 and may include aplurality of through-holes so as to supply a first source gas to thereaction space 203 and to supply a plurality of source gases to thesecond injection unit 350-1 and the third injection unit 350-2. Thereaction space 303 may be connected with the supply unit and is definedas a predetermined space in the housing 301. In more detail, thereaction space 303 may have a cylindrical shape.

The first injection unit 342 is connected to the reaction space 303.That is, the reaction space 303 is arranged between the supply unit andthe first injection unit 342. The first source gas input via the supplyunit is changed to a desired status in the reaction space 303, isdelivered to the first injection unit 342, and reacts with a depositiontarget in the first injection unit 342, so that a deposition process isperformed on a surface of the deposition target. The first injectionunit 342 may be connected to the reaction space 303 via a connectionunit 341, e.g., the connection unit 341 may have a width that is lessthan a width of each of the first injection unit 342 and the reactionspace 303.

The plasma generator 311 is disposed in the reaction space 303. In moredetail, the plasma generator 311 may have an electrode form having avoltage applied thereto. Also, the plasma generator 311 may have ahollow column shape. In particular, the plasma generator 311 may have ahollow cylindrical-column shape having a curved outer surface.

Also, a corresponding surface 315 that is defined as an innercircumferential surface of the reaction space 303 is a member thatcorresponds to the plasma generator 311, e.g., the corresponding surface315 may be a ground electrode. By doing so, plasma may be generated in aspace between the plasma generator 311 and the corresponding surface315. The source gas that is input via the supply unit is changed to aradical status in the space between the plasma generator 311 and thecorresponding surface 315, so that a deposition characteristic of thesource gas is improved.

The plasma generator 311 includes a first hole (not shown) and a secondhole (not shown) and is the same as that in the previous embodiment,thus, detailed descriptions are omitted here.

The filament unit 330 is disposed in the reaction space 303. In moredetail, the filament unit 330 is disposed in the plasma generator 311.That is, the filament unit 330 is disposed in a space of the plasmagenerator 311 having the hollow cylindrical-column shape. Although notillustrated, a power (not shown) is connected to the filament unit 330so as to apply a voltage thereto. By doing so, heat and thermal electronemission are emitted from the filament unit 330. Also, the heat andthermal electrons collide with a gas around the filament unit 330,thereby generating a secondary electron.

The filament unit 330 may be formed of various materials, e.g., a metalmaterial or a ceramic material, which has a high electron emissioncoefficient. The metal material includes, e.g., at least one oftungsten, tantalum, and titanium, and the ceramic material includes,e.g., at least one of LaB₆, BaO, and SrO.

The filament unit 330 is supported by a support pillar 320. The filamentunit 330 is the same as that in the previous embodiment, thus, detaileddescriptions are omitted here.

An intermediate part 312 is disposed between the plasma generator 311and the filament unit 330. That is, similar to the plasma generator 311,the intermediate part 312 has a hollow cylindrical-column shape. Also,the intermediate part 312 has a first hole (not shown) and a second hole(not shown) and is the same as that in the previous embodiment, thus,detailed descriptions are omitted here.

The second injection unit 350-1 is formed adjacent to the firstinjection unit 342. Also, the second injection unit 350-1 may beseparated from the first injection unit 342. The second injection unit350-1 injects a purge gas toward the substrate S. The purge gas includesan inert gas. Also, in another embodiment, the second injection unit350-1 may inject a second source material to be deposited on thesubstrate S in the direction toward the substrate S. Although notillustrated, the second injection unit 350-1 is connected with a supplyunit so as to receive the purge gas or the second source material, e.g.,the supply unit for the second injection unit 350-1 may be separatelyformed from the supply unit (not shown) that supplies a first sourcematerial to the reaction space 303.

The third injection unit 350-2 is formed adjacent to the first injectionunit 342. Also, the third injection unit 350-2 may be separated from thefirst injection unit 342. In more detail, the first injection unit 342is disposed between the second injection unit 350-1 and the thirdinjection unit 350-2. The third injection unit 350-2 injects a purge gastoward the substrate S. The purge gas includes an inert gas. Also, inanother embodiment, the third injection unit 350-2 may inject the secondsource material to be deposited on the substrate S in the directiontoward the substrate S. Also, the third injection unit 350-2 may injecta third source material to be deposited on the substrate S in thedirection toward the substrate S.

Also, the exhaustion unit 370-2 is disposed between the first injectionunit 342 and the second injection unit 350-1, and the exhaustion unit370-3 is disposed between the first injection unit 342 and the thirdinjection unit 350-2. Also, the exhaustion unit 370-1 and the exhaustionunit 370-4 are disposed adjacent to side edges of the second injectionunit 350-1 and the third injection unit 350-2, respectively.

The exhaustion units 370-1, 370-2, 370-3, and 370-4 are disposedadjacent to the first injection unit 342, the second injection unit350-1, and the third injection unit 350-2, and exhaust a material thatremains in the deposition process using the first injection unit 342,the second injection unit 350-1, and the third injection unit 350-2, sothat a characteristic of a deposition layer is improved.

According to the present embodiment, when the vapor deposition apparatus300 changes the source gas to the radical status by using the plasmagenerator 311, the vapor deposition apparatus 300 uses the filament unit330 so that the source gas is easily activated. By doing so, theefficiency of the change from the source gas to the radical status isincreased, so that a characteristic of the deposition layer is easilyimproved.

Here, the deposition process may be performed while the substrate S andthe vapor deposition apparatus 300 relatively move with respect to eachother. That is, as illustrated in FIG. 6, the deposition process may beperformed while the substrate S is moved in an X-axis direction of FIG.6, or conversely, the vapor deposition apparatus 200 may move. However,in another embodiment of the example embodiments, the deposition processmay be performed while the substrate S is fixed with respect to thevapor deposition apparatus 600.

Also, according to the present embodiment, the vapor depositionapparatus 300 includes the second injection unit 350-1 and the thirdinjection unit 350-2, thereby easily preventing foreign substances orgases from flowing into a deposition process region when the depositionprocess is performed via the first injection unit 342.

As in the previous embodiment of FIG. 4, positions of the substrate Sand the vapor deposition apparatus 300 may be switched.

FIG. 7 is a plane view of a vapor deposition apparatus 400 according toanother embodiment.

Referring to FIG. 7, the vapor deposition apparatus 400 includes aplurality of first regions 410-1 and 410-2, a plurality of secondregions 450-1 and 450-2, a plurality of purge parts 460-1, 460-2, 460-3,and 460-4, and a plurality of exhaustion units 470-1, 470-2, 470-3 . . .470-8, 470-9, and 470-10.

Each of the first regions 410-1 and 410-2 includes a housing 401, asupply unit (not shown), a reaction space 403, a plasma generator 411, afirst injection unit 442, a filament unit 430, and a second injectionunit 450.

The housing 401 is formed of a material having durability so as tomaintain not only an entire shape and appearance of the first region410-1 but also to maintain an entire shape and appearance of the vapordeposition apparatus 400. That is, the housing 401 may be formed whilecorresponding to each of the first regions 410-1 and 410-2, and to anentire portion of the vapor deposition apparatus 400.

Since the first regions 410-1 and 410-2 have the same configuration, theconfiguration of the first region 410-1 is only described below.

The supply unit is disposed in the housing 401, e.g., the supply unitmay be disposed in an upper portion of the housing 401 and may supply afirst source gas to the reaction space 403. The reaction space 403 maybe connected with the supply unit and is defined as a predeterminedspace in the housing 401. In more detail, the reaction space 403 mayhave a cylindrical shape.

The first injection unit 442 is connected to the reaction space 403.That is, the reaction space 403 is arranged between the supply unit andthe first injection unit 442.

The first injection unit 442 is connected to the reaction space 403.That is, the reaction space 403 is arranged between the supply unit andthe first injection unit 442. The first source gas input via the supplyunit is changed to a desired status in the reaction space 403, isdelivered to the first injection unit 442, and reacts with a depositiontarget in the first injection unit 442, so that a deposition process isperformed on a surface of the deposition target. The first injectionunit 442 may be connected to the reaction space 403 via a connectionunit 441, and in this regard, the connection unit 441 may have a widththat is less than a width of each of the first injection unit 442 andthe reaction space 403.

The plasma generator 411 is disposed in the reaction space 403. In moredetail, the plasma generator 411 may have an electrode form having avoltage applied thereto. Also, the plasma generator 411 may have ahollow column shape. In particular, the plasma generator 411 may have ahollow cylindrical-column shape having a curved outer surface.

Also, a corresponding surface 415 that is defined as an innercircumferential surface of the reaction space 403 is a member thatcorresponds to the plasma generator 411, and for example, thecorresponding surface 415 may be a ground electrode. By doing so, plasmamay be generated in a space between the plasma generator 411 and thecorresponding surface 415. The source gas that is input via the supplyunit is changed to a radical status in the space between the plasmagenerator 411 and the corresponding surface 415, so that a depositioncharacteristic of the source gas is improved.

The plasma generator 411 includes a first hole (not shown) and a secondhole (not shown) and is the same as that in the previous embodiment,thus, detailed descriptions are omitted here.

The filament unit 430 is disposed in the reaction space 403. In moredetail, the filament unit 430 is disposed in the plasma generator 411.That is, the filament unit 430 is disposed in a space of the plasmagenerator 411 having the hollow cylindrical-column shape. Although notillustrated, a power (not shown) is connected to the filament unit 430so as to apply a voltage thereto. By doing so, heat and thermal electronare emitted from the filament unit 430. Also, the heat and thermalelectron collide with a gas around the filament unit 430, therebygenerating a secondary electron.

The filament unit 430 may be formed of various materials, including ametal material or a ceramic material, which has a high electron emissioncoefficient. The metal material includes tungsten, tantalum, ortitanium, and the ceramic material includes LaB₆, BaO or SrO.

The filament unit 430 is supported by a support pillar 420. The filamentunit 430 is the same as that in the previous embodiment, thus, detaileddescriptions are omitted here.

An intermediate part 412 is disposed between the plasma generator 411and the filament unit 430. That is, similar to the plasma generator 411,the intermediate part 412 has a hollow cylindrical-column shape. Also,the intermediate part 412 has a first hole (not shown) and a second hole(not shown) and is the same as that in the previous embodiment, thus,detailed descriptions are omitted here.

The second regions 450-1 and 450-2 are separated from the first regions410-1 and 410-2, respectively. Also, a second source material to bedeposited on a substrate S is injected toward the substrate S via eachof the second regions 450-1 and 450-2.

The purge parts 460-1, 460-2, 460-3, and 460-4 are disposed adjacent tothe first regions 410-1 and 410-2 and the second regions 450-1 and450-2, respectively. In more detail, the purge part 460-2 is disposedbetween the first region 410-1 and the second region 450-1, the purgepart 460-3 is disposed between the first region 410-1 and the secondregion 450-2, and the purge part 460-4 is disposed between the firstregion 410-2 and the second region 450-2. Also, the purge part 460-1 isdisposed to be adjacent to the second region 450-1. The purge parts460-1, 460-2, 460-3, and 460-4 inject a purge gas including an inert gastoward the substrate S.

The exhaustion units 470-1, 470-2, 470-3 . . . 470-8, 470-9, and 470-10are disposed adjacent to the first regions 410-1 and 410-2, the secondregions 450-1 and 450-2, and the purge parts 460-1, 460-2, 460-3, and460-4, respectively. That is, the exhaustion units 470-1, 470-2, 470-3 .. . 470-8, 470-9, and 470-10 are disposed between the first regions410-1 and 410-2, the second regions 450-1 and 450-2, and the purge parts460-1, 460-2, 460-3, and 460-4, respectively. While FIG. 7 illustrates acase in which the two exhaustion units 470-5 and 470-6 are disposedbetween the first region 410-1 and the purge part 460-3, the one or moreembodiments of the example embodiments are not limited thereto and thus,one of the two exhaustion units 470-5 and 470-6 may be skipped.

A deposition method using the vapor deposition apparatus 400 is brieflydescribed below. In more detail, the deposition method involves formingAl_(x)O_(y) on the substrate S by using the vapor deposition apparatus400.

When the substrate S that is a deposition target is disposed tocorrespond to the second region 450-1 of the vapor deposition apparatus400, a second source material, e.g., a gas including an aluminum (Al)atom such as trimethyl aluminum (TMA) in a gas status, may be injectedfrom the second region 450-1 toward the substrate S. By doing so, anadsorbent layer including Al is formed on a top surface of the substrateS. In more detail, a chemical adsorbent layer and a physical adsorbentlayer are formed on the top surface of the substrate S.

The physical adsorbent layer having low coherence among molecules on thetop surface of the substrate S is detached from the substrate S due tothe purge gas injected by the purge part 460-1 or the purge part 460-2,and is effectively removed from the substrate S via a pumping operationby the exhaustion units 470-2 and 470-3, so that purity of a depositionlayer to be finally formed on the substrate S is increased.

Afterward, when the substrate S that is the deposition target is movedin an X-axis direction of FIG. 7, i.e., an arrow direction, and then isdisposed while corresponding to the first injection unit 442 of thefirst region 410-1 of the vapor deposition apparatus 400, the firstsource gas is input to the reaction space 403. In more detail, the firstsource gas may include oxygen, e.g., at least one of H₂O, O₂, N₂O, etc.

Here, plasma is generated between the plasma generator 411 and thecorresponding surface 415 of the reaction space 403, and at least someportion of an oxygen component of the first source gas that is input tothe reaction space 403 is changed to a radical status.

Here, a voltage is applied to the filament unit 430 via a power (notshown) so that heat is generated in the filament unit 430. Also, thefilament unit 430 is formed of a material having a high electronemission coefficient, thereby emitting a thermal electron. The heat andthermal electron facilitate a process in which the first source gas thatis input to the reaction space 403 is changed to the radical status.That is, an amount of the change from the source gas to the radicalstatus is increased, and a speed of the change is accelerated.

In particular, radiant heat from the filament unit 430 while a surfacetemperature of the filament unit 430 is equal to or greater than 1300°C. increases an efficiency of the change from the first source gas tothe radical status.

Also, the heat and thermal electron emitted from the filament unit 430collide with a gas in an adjacent region, i.e., the source gas and aninert gas for plasma generation, so that the heat and thermal electrongenerate a secondary electron. In this regard, the secondary electronalso increases the efficiency of the change from the first source gas tothe radical status.

The intermediate part 412 that is disposed between the filament unit 430and the plasma generator 411 allows source gases to be uniformlysupplied. A source in the radical status reaches a surface of thesubstrate S, so that a desired deposition layer is formed.

That is, a radical material formed of the first source material reactsto the chemical adsorbent layer formed of the second source materialwhich is already adsorbed on the substrate S, or replaces a portion ofthe chemical adsorbent layer, so that Al_(x)O_(y) that is a finalresultant deposition layer is formed on the substrate S. Here, theresidue of the first source material forms the physical adsorbent layerand remains on the substrate S.

When the purge gas is injected from the purge part 460-2 or the purgepart 460-3 toward the substrate S, the physical adsorbent layer that isformed of the first source material and that remains on the substrate Sis detached from the substrate S, and is effectively removed from thesubstrate S via a pumping operation by the exhaustion units 470-4 and470-5, so that purity of the deposition layer to be finally formed onthe substrate S is increased.

Accordingly, the deposition layer including the first source materialand the second source material is formed on the substrate S. In moredetail, a single-layered atomic layer including Al_(x)O_(y) is formed onthe substrate S. Then, the substrate S is moved and sequentiallycorresponds to the second region 450-2 and the first region 410-2, sothat required deposition layers may be further formed in a sequentialmanner.

According to the present embodiment, when the vapor deposition apparatus400 changes the source gas to the radical status by using the plasmagenerator 411, the vapor deposition apparatus 400 uses the filament unit430 so that the source gas is easily activated. By doing so, theefficiency of the change from the source gas to the radical status isincreased, so that a characteristic of the deposition layer is easilyimproved.

Here, the deposition process may be performed while the substrate S andthe vapor deposition apparatus 400 relatively move with respect to eachother. That is, as illustrated in FIG. 7, the deposition process may beperformed while the substrate S is moved in the X-axis direction of FIG.7, or conversely, the vapor deposition apparatus 400 may move. However,in another embodiment of the example embodiments, the deposition processmay be performed while the substrate S is fixed with respect to thevapor deposition apparatus 400.

Also, as in the previous embodiment of FIG. 4, positions of thesubstrate S and the vapor deposition apparatus 400 may be switched.

FIG. 8 is a cross-sectional view illustrating an organic light-emittingdisplay apparatus 10 that is manufactured by using a depositionapparatus according to an embodiment. FIG. 9 is a magnified view of an Fportion shown in FIG. 8. In more detail, FIGS. 8 and 9 illustrate theorganic light-emitting display apparatus 10 that is manufactured byusing one of the vapor deposition apparatuses 100, 200, 300, and 400.

The organic light-emitting display apparatus 10 is formed on a substrate30. The substrate 30 may be formed of a glass material, a plasticmaterial, or a metal material.

A buffer layer 31 containing an insulating material is formed on thesubstrate 30 so as to planarize a top surface of the substrate 30 and toprevent moisture and foreign substances from penetrating into thesubstrate 30.

A thin-film transistor (TFT) 40, a capacitor 50, and an organiclight-emitting device 60 are formed on the buffer layer 31. The TFT 40includes, but not limited thereto, an active layer 41, a gate electrode42, and source/drain electrodes 43. The organic light-emitting device 60includes a first electrode 61, a second electrode 62, and anintermediate layer 63. The capacitor 50 includes a first capacitorelectrode 51 and a second capacitor electrode 52.

In more detail, the active layer 41 formed as a predetermined pattern isdisposed on a top surface of the buffer layer 31. The active layer 41may include an inorganic semiconductor material such as silicon, anorganic semiconductor material, or an oxide semiconductor material, andmay be formed by injecting p-type or n-type dopant thereto. The firstcapacitor electrode 51 is formed from the same material layer as theactive layer 41.

A gate insulating layer 32 is formed on the active layer 41. A gateelectrode 42 is formed on the gate insulating layer 32 so as tocorrespond to the active layer 41. An interlayer insulating layer 33 isformed to cover the gate electrode 42, and the source/drain electrodes43 are formed on the interlayer insulating layer 33 while thesource/drain electrodes 43 contact a predetermined region of the activelayer 41. The second capacitor electrode 52 may be formed from the samematerial layer as the source/drain electrodes 43.

A passivation layer 34 is formed to cover the source/drain electrodes43, and a separate insulating layer may be further formed on thepassivation layer 34 so as to planarize the TFT 40.

The first electrode 61 is formed on the passivation layer 34. The firstelectrode 61 is electrically connected to one of the source/drainelectrodes 43. Then, a pixel-defining layer (PDL) 35 is formed to coverthe first electrode 61. A predetermined opening 64 is formed in the PDL35, and then an intermediate layer 63 including an organic emissionlayer in a region defined by the opening 64 is formed.

An encapsulation layer 70 is formed on the second electrode 62. Theencapsulation layer 70 may include an organic material or an inorganicmaterial, and may have a structure in which the organic material and theinorganic material are alternately stacked. The encapsulation layer 70may be formed by using one of the vapor deposition apparatuses 100, 200,300, and 400. That is, a desired layer may be formed while the substrate30, whereon the second electrode 62 is formed, passes through one of thevapor deposition apparatuses 100, 200, 300, and 400.

In particular, the encapsulation layer 70 includes an inorganic layer 71and an organic layer 72, e.g., the inorganic layer 71 includes aplurality of layers 71 a, 71 b, and 71 c, and the organic layer 72includes a plurality of 72 a, 72 b, and 72 c. Here, it is possible toform the layers 71 a, 71 b, and 71 c of the inorganic layer 71 by usingone of the vapor deposition apparatuses 100, 200, 300, and 400.

However, the example embodiments are not limited thereto. That is, otherinsulating layers such as the buffer layer 31, the gate insulating layer32, the interlayer insulating layer 33, the passivation layer 34, andthe PDL 35 of the organic light-emitting display apparatus 10 may beformed by using one of the vapor deposition apparatuses 100, 200, 300,and 400. Also, various thin layers such as the active layer 41, the gateelectrode 42, the source/drain electrodes 43, the first electrode 61,the second electrode 62, and the intermediate layer 63 may be formed byusing one of the vapor deposition apparatuses 100, 200, 300, and 400.

Since the organic light-emitting display apparatus increases in size andrequires high definition, it may not be easy to deposit a large thinfilm having a desired characteristic by conventional depositionapparatus. Also, there may be a limit in improving an efficiency of aconventional process of forming the thin film.

However, a characteristic of the deposition layer formed in the organiclight-emitting display apparatus may be improved by using the vapordeposition apparatus according to the one or more embodiments, so thatan electrical characteristic and an image quality of the organiclight-emitting display apparatus may be improved. That is, according tothe vapor deposition apparatus of the example embodiments, thedeposition process may be efficiently performed and a characteristic ofthe deposition layer may be easily improved.

While the example embodiments has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the example embodiments as defined by the following claims.

What is claimed is:
 1. A vapor deposition apparatus for forming adeposition layer on a substrate, the vapor deposition apparatuscomprising: a supply unit configured to receive a first source gas; areaction space connected to the supply unit; a plasma generator in thereaction space; a first injection unit configured to inject a depositionsource material to the substrate, the deposition source materialincluding the first source gas; and a filament unit in the reactionspace, the filament unit being connected to a power source.
 2. The vapordeposition apparatus of claim 1, further comprising a support pillar inthe reaction space, the filament unit being wound around the supportpillar.
 3. The vapor deposition apparatus of claim 1, wherein thefilament unit includes a metal material or a ceramic material.
 4. Thevapor deposition apparatus of claim 1, wherein the filament unitincludes at least one of tungsten, tantalum, titanium, LaB₆, BaO, andSrO.
 5. The vapor deposition apparatus of claim 1, wherein the plasmagenerator has a hollow column shape, the filament unit being inside thehollow column shape of the plasma generator.
 6. The vapor depositionapparatus of claim 5, wherein the plasma generator has a plurality offirst holes facing the supply unit and a plurality of second holesfacing the first injection unit.
 7. The vapor deposition apparatus ofclaim 5, further comprising an intermediate part with a hollow columnshape, the intermediate part being between and concentric with theplasma generator and the filament unit.
 8. The vapor depositionapparatus of claim 7, wherein the intermediate part has a plurality offirst holes facing the supply unit and a plurality of second holesfacing the first injection unit.
 9. The vapor deposition apparatus ofclaim 1, wherein a space is defined between the plasma generator and acorresponding surface of the reaction space, the corresponding surfaceof the reaction space being an inner circumferential surface of thereaction space overlapping the plasma generator, and plasma isconfigured to be generated in the defined space.
 10. The vapordeposition apparatus of claim 1, wherein the plasma generator has anelectrode form.
 11. The vapor deposition apparatus of claim 1, furthercomprising a connection unit between the reaction space and the firstinjection unit, the connection unit having a width less than each of thereaction space and the first injection unit.
 12. The vapor depositionapparatus of claim 1, wherein the substrate is closer to a ground thanthe vapor deposition apparatus, the first injection unit facing theground.
 13. The vapor deposition apparatus of claim 1, wherein thesubstrate is farther from a ground than the vapor deposition apparatus,the first injection unit being in an opposite direction with respect tothe ground.
 14. The vapor deposition apparatus of claim 1, wherein thesubstrate and the vapor deposition apparatus are configured to moverelatively to each other.
 15. The vapor deposition apparatus of claim 1,further comprising a second injection unit adjacent to the firstinjection unit, the second injection unit being separated from the firstinjection unit.
 16. The vapor deposition apparatus of claim 15, whereinthe second injection unit is configured to inject a purge gas or asecond source material toward the substrate.
 17. The vapor depositionapparatus of claim 1, further comprising a second injection unit and athird injection unit adjacent to the first injection unit, each of thesecond and third injection units being separated from the firstinjection unit, and the first injection unit being between the secondand third injection units.
 18. The vapor deposition apparatus of claim17, wherein each of the second injection unit and the third injectionunit is configured to inject toward the substrate one of a purge gas, asecond source material, and a third source material.
 19. The vapordeposition apparatus of claim 17, further comprising a plurality ofexhaustion units adjacent to the first injection unit, the secondinjection unit, and the third injection unit, respectively.
 20. Thevapor deposition apparatus of claim 19, wherein the plurality ofexhaustion units include a first exhaustion unit between the firstinjection unit and the second injection unit, and a second exhaustionunit between the first injection unit and the third injection unit. 21.A vapor deposition apparatus for forming a deposition layer on asubstrate, the vapor deposition apparatus comprising: a plurality offirst regions, each of the plurality of first regions including: asupply unit configured to receive a first source gas, a reaction spaceconnected to the supply unit, a plasma generator in the reaction space,a first injection unit configured to inject a deposition source materialto the substrate, the deposition source material including the firstsource gas, and a filament unit in the reaction space, the filament unitbeing connected to a power source; a plurality of second regions, eachof the plurality of second regions being configured to inject a secondsource material being toward the substrate; and a plurality of purgeparts, the plurality of purge parts being configured to inject a purgegas toward the substrate.
 22. The vapor deposition apparatus of claim21, wherein each of the plurality of purge parts is between the firstregion and the second region.
 23. The vapor deposition apparatus ofclaim 21, further comprising a plurality of exhaustion units adjacent tothe first region, the second region, and the purge part.
 24. Adeposition method for forming a deposition layer on a substrate, themethod comprising: supplying a first source gas from a supply unit to areaction space; generating plasma by using a plasma generator disposedin the reaction space; activating the first source gas in the reactionspace by using a filament unit in the reaction space and connected to apower source, such that at least a portion of the first source gas inthe reaction space is changed into a radical status; and injecting afirst source deposition material to the substrate, the first sourcedeposition material including the first source gas in the radicalstatus.
 25. The deposition method of claim 24, wherein using thefilament unit includes emitting heat and thermal electrons to activatethe first source gas.
 26. The deposition method of claim 24, wherein adeposition process is performed while the substrate and the vapordeposition apparatus move relatively to each other.
 27. A method ofmanufacturing an organic light-emitting display apparatus, the methodcomprising: disposing a substrate to correspond to a vapor depositionapparatus; and forming a thin film on the substrate, the thin film beingat least one of a first electrode, an intermediate layer having anorganic emission layer, a second electrode, and an encapsulation layer,and forming the thin film includes: supplying a first source gas from asupply unit to a reaction space, generating plasma by using a plasmagenerator disposed in the reaction space, activating the first sourcegas in the reaction space by using a filament unit that in the reactionspace and connected to a power source, such that at least a portion ofthe first source gas in the reaction space is changed into a radicalstatus, and injecting a first source deposition material to thesubstrate, the first source deposition material including the firstsource gas in the radical status.
 28. The method of claim 27, whereinforming the thin film includes forming the encapsulation layer on thesecond electrode.
 29. The method of claim 27, wherein forming the thinfilm includes forming an insulating layer.
 30. The method of claim 27,wherein forming the thin film includes forming a conductive layer.